? 2016 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 ? c to 150 ? c 850 v v dgr t j = 25 ? c to 150 ? c, r gs = 1m ? 850 v v gss continuous ? 30 v v gsm transient ? 40 v i d25 t c = 25 ? c 110 a i dm t c = 25 ? c, pulse width limited by t jm 220 a i a t c = 25 ? c55a e as t c = 25 ? c3j p d t c = 25 ? c 1170 w dv/dt i s ? i dm , v dd ? v dss , t j ? 150c 50 v/ns t j -55 ... +150 ? c t jm 150 ? c t stg -55 ... +150 ? c v isol 50/60 hz, rms t = 1 minute 2500 v~ i isol ? 1ma t = 1 second 3000 v~ m d mounting torque 1.5/13 nm/lb.in terminal connection torque 1.3/11.5 nm/lb.in weight 30 g IXFN110N85X v dss = 850v i d25 = 110a r ds(on) ? ? ? ? ? 33m ? ? ? ? ? ds100731(6/16) features ? international standard package ? minibloc, with aluminium nitride isolation ? isolation voltage 2500 v~ ? high current handling capability ? fast intrinsic diode ? avalanche rated ? low r ds(on) advantages ? high power density ? easy to mount ? space savings applications ? switch-mode and resonant-mode ??? power supplies ? dc-dc converters ? pfc circuits ? ac and dc motor drives ? robotics and servo controls n-channel enhancement mode avalanche rated fast intrinsic diode x-class hiperfet tm power mosfet minibloc, sot-227 ??????????? ??????????? ??????????? ??????????? ??????????? e153432 g d s s g = gate d = drain s = source s s d g advance technical information symbol test conditions characteristic values (t j = 25 ? c unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 3ma 850 v v gs(th) v ds = v gs , i d = 8ma 3.5 5.5 v i gss v gs = ? 30v, v ds = 0v ???????????????????? 200 na i dss v ds = v dss , v gs = 0v 50 ? a t j = 125 ? c 5 ma r ds(on) v gs = 10v, i d = 55a, note 1 33 m ?
ixys reserves the right to change limits, test conditions, and dimensions. IXFN110N85X note 1. pulse test, t ? 300 ? s, duty cycle, d ?? 2%. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 source-drain diode symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max. i s v gs = 0v 110 a i sm repetitive, pulse width limited by t jm 440 a v sd i f = i s , v gs = 0v, note 1 1.4 v t rr 205 ns q rm 5.5 ? c i rm 54.0 a i f = 55a, -di/dt = 300a/ ? s v r = 100v, v gs = 0v symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max g fs v ds = 10v, i d = 55a, note 1 43 72 s r gi gate input resistance 0.55 ? c iss 17 nf c oss v gs = 0v, v ds = 25v, f = 1mhz 16 nf c rss 260 pf c o(er) 470 pf c o(tr) 2170 pf t d(on) 50 ns t r 25 ns t d(off) 144 ns t f 11 ns q g(on) 425 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 55a 105 nc q gd 225 nc r thjc 0.107 ?? c/w r thcs 0.05 ????????????????? c/w resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 55a r g = 1 ?? (external) effective output capacitance energy related time related v gs = 0v v ds = 0.8 ? v dss advance technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experi- ence, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice. sot-227b (ixfn) outline (m4 screws (4x) supplied)
? 2016 ixys corporation, all rights reserved IXFN110N85X fig. 1. output characteristics @ t j = 25oc 0 10 20 30 40 50 60 70 80 90 100 110 00.511.522.533.54 v ds - volts i d - amperes v gs = 10v 7v 5v 6v 8v fig. 3. output characteristics @ t j = 125oc 0 10 20 30 40 50 60 70 80 90 100 110 0123456789 v ds - volts i d - amperes v gs = 10v 7v 6v 5v 8v fig. 4. r ds(on) normalized to i d = 55a value vs. junction temperature 0.2 0.6 1.0 1.4 1.8 2.2 2.6 3.0 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 55a i d = 110a fig. 2. extended output characteristics @ t j = 25oc 0 50 100 150 200 250 0 5 10 15 20 25 v ds - volts i d - amperes v gs = 10v 7v 6v 8v 9v fig. 5. r ds(on) normalized to i d = 55a value vs. drain current 0.6 1.0 1.4 1.8 2.2 2.6 3.0 0 50 100 150 200 250 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 6. normalized breakdown & threshold voltages vs. junction temperature 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 -60 -40 -20 0 20 40 60 80 100 120 140 160 t j - degrees centigrade bv dss / v gs(th) - normalized bv dss v gs(th)
ixys reserves the right to change limits, test conditions, and dimensions. IXFN110N85X fig. 8. input admittance 0 20 40 60 80 100 120 140 160 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 7. maximum drain current vs. case temperature 0 20 40 60 80 100 120 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes fig. 9. transconductance 0 20 40 60 80 100 120 140 0 20 40 60 80 100 120 140 160 i d - amperes g f s - siemens t j = - 40oc 125oc 25oc fig. 10. forward voltage drop of intrinsic diode 0 50 100 150 200 250 300 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 11. gate charge 0 2 4 6 8 10 0 50 100 150 200 250 300 350 400 450 q g - nanocoulombs v gs - volts v ds = 425v i d = 55a i g = 10ma fig. 12. capacitance 0.001 0.01 0.1 1 10 100 1 10 100 1000 v ds - volts capacitance - nanofarad s f = 1 mhz c iss c rss c oss
? 2016 ixys corporation, all rights reserved IXFN110N85X ixys ref: f_110n85x (u9-d307) 6-06-16 fig. 15. maximum transient thermal impedance 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - k / w fig. 15. maximum transient thermal impedance aaaaa 0.2 fig. 14. forward-bias safe operating area 0.1 1 10 100 1000 1 10 100 1,000 v ds - volts i d - amperes t j = 150oc t c = 25oc single pulse 25s 100s r ds( on ) limit 1ms 10ms dc fig. 13. output capacitance stored energy 0 20 40 60 80 100 120 140 160 0 100 200 300 400 500 600 700 800 900 v ds - volts e oss - microjoules
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